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High Power Rectifier Diode, 300/500/800/1000 Amp

High Power Rectifier Diode, 300/500/800/1000 Amp
High Power Rectifier Diode, 300/500/800/1000 Amp
High Power Rectifier Diode, 300/500/800/1000 Amp
High Power Rectifier Diode, 300/500/800/1000 Amp
High Power Rectifier Diode, 300/500/800/1000 Amp
High Power Rectifier Diode, 300/500/800/1000 Amp
High Power Rectifier Diode, 300/500/800/1000 Amp
High Power Rectifier Diode, 300/500/800/1000 Amp
High Power Rectifier Diode, 300/500/800/1000 Amp
from
$68.74
Ex Tax: $68.74
  • Stock: In Stock
  • Model: RDDLZ-RF-ZP
  • Weight: 1.00
  • SKU: RDDLZ-RF-ZP

Available Options

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Silicon rectifier diode adopts a bolt installation design and is widely used in various fields, including high-power converters, welding equipment, motor control and drive, charging equipment, electroplating, and industrial and traction high-power transmission devices.

Features

  • High-power rectifier diode features a diffusion junction structure, providing excellent electrical performance. 
  • It has a fully enclosed ceramic-metal flat plate structure, ensuring reliability and durability. 
  • This rectifier diode is capable of withstanding high surge currents, making it suitable for various harsh operating conditions. 
  • Silicon rectifier diode complies with the GB4939-1985 standard, ensuring product quality and safety. 
  • The dual-side cooling design effectively enhances heat dissipation, prolonging the lifespan of the diode.

Specification

ModelRDDLZ-ZP300ARDDLZ-ZP500ARDDLZ-ZP800ARDDLZ-ZP1000A
Average forward current300A500A800A1000A
Reverse repetitive peak voltage200~3000V200~3000V200~3000V200~3000V
Reverse repetitive peak current≤15mA≤15mA≤20mA≤25mA
Forward average voltage/output current1.8V/600A1.8V/1500A2.2V/2400A2.0V/3000A
Thermal impedance (shell to radiator)0.065℃/W0.040℃/W0.022℃/W0.022℃/W
Maximum rated junction temperature150℃150℃150℃150℃
Mounting force5.3~10KN10~20KN19~26KN19~26KN
Storage temperature-40~160℃-40~160℃-40~160℃-40~160℃
Weight (approximately)85g110g200g270g


Dimension (mm)

Tips: Working principle of a rectifier diode

The working principle of a rectifier diode is based on the properties of semiconductor materials. It consists of two different types of semiconductor materials (N-type and P-type), which form a PN junction at their interface. When the anode (P-type) is connected to a positive voltage and the cathode (N-type) to a negative voltage, the PN junction becomes forward-biased, allowing current to flow through the diode. In this state, the diode has low resistance, enabling smooth current conduction.

Conversely, when the anode is connected to a negative voltage and the cathode to a positive voltage, the PN junction is reverse-biased, and the diode enters a cutoff state, preventing current from flowing. In this state, the diode presents high resistance, effectively blocking current. Rectifier diodes are widely used in converting alternating current (AC) to direct current (DC) in power supply applications, allowing current to flow in only one direction and thereby achieving rectification. By connecting multiple diodes, bridge rectifier circuits can be constructed to enhance rectification efficiency.

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